User:    Pass:
 
Products
 
Sapphire Wafer

       

Specification for 6" sapphire wafers

 

Crystal material

99.995%High Purity, High purity, Monocrystalline Al2O3

Grade

Prime, Epi-ready

Wafer SurfaceOrientation

C-axis [0001] off M-plane [1-100] 0.2° ± 0.1°

R-plane [1-102] ± 0.25°

A-plane [11-20] ± 0.25°

M-plane [1-100] ± 0.25°

Diameter

150mm±0.25mm

Thickness

675um±25um

Primary Flat Direction

A-axis [11-20] ± 0.3°

45°± 2°counter-clockwise from the projection of the C-axis ontothe R-plane

C-plane [0001] ± 0.5°

C-plane [0001] ± 0.5°

Primary Length

47.5±1.5mm or Notch

Secondary Flat

None

Front surface

Epi-ready polished, Ra ≤0.3nm

Back Surface

Polished/Fine ground, Ra= 0.4 ~ 1.2um

Flatness

TTV ≤25um,BOW≤25um, WARP ≤ 25um

Edge condition

Edge defects not to exceed SEMI M3-91

Laser Mark

Upon Customer's Request

Packaging

Single piece/25pcs cassette packaging, then sealed with N2 filled in a moisture-stopping plastic and aluminum double layer bag. Done in a class 100 clean room.

 
Copyright:Hongyuan Scitech Wafer Technology Co., Ltd Tel : +86-355-8567991 Fax : +86-355-8567998 Email:info@hywafer.com
Addr:Optoelectronic Industrial Park, Changzhi,Shanxi.
Support:1000hu.net