

Specification for 6" sapphire wafers
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Crystal material |
99.995%High Purity, High purity, Monocrystalline Al2O3 |
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Grade |
Prime, Epi-ready |
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Wafer SurfaceOrientation |
C-axis [0001] off M-plane [1-100] 0.2° ± 0.1° |
R-plane [1-102] ± 0.25° |
A-plane [11-20] ± 0.25° |
M-plane [1-100] ± 0.25° |
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Diameter |
150mm±0.25mm |
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Thickness |
675um±25um |
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Primary Flat Direction |
A-axis [11-20] ± 0.3° |
45°± 2°counter-clockwise from the projection of the C-axis ontothe R-plane |
C-plane [0001] ± 0.5° |
C-plane [0001] ± 0.5° |
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Primary Length |
47.5±1.5mm or Notch |
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Secondary Flat |
None |
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Front surface |
Epi-ready polished, Ra ≤0.3nm |
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Back Surface |
Polished/Fine ground, Ra= 0.4 ~ 1.2um |
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Flatness |
TTV ≤25um,BOW≤25um, WARP ≤ 25um |
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Edge condition |
Edge defects not to exceed SEMI M3-91 |
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Laser Mark |
Upon Customer's Request |
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Packaging |
Single piece/25pcs cassette packaging, then sealed with N2 filled in a moisture-stopping plastic and aluminum double layer bag. Done in a class 100 clean room. |
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